| PART |
Description |
Maker |
| HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module
262114-word x 8 bit dynamic random access memory module
26214-word x 8-bit dynamic random access memory module
262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
| AK5321024BW09 |
Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| MB8132E-H |
32,768-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Fujitsu
|
| HM5117400BS-6 HM5117400BS-7 HM5117400BS-8 HM511740 |
4194304-WORD X 4-BIT DYNAMIC RANDOM ACCESS MEMORY
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| AK58256AG AK58256AS |
262,144 x 8 bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| IDT70824S IDT70824S20GB IDT70824S20GI IDT70824S25G |
TRANS NPN W/RES 80 HFE SMINI-3 4K X 16 STANDARD SRAM, 45 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 4K X 16 STANDARD SRAM, 25 ns, PQFP80
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM 高K的16顺序访问随机存取存储器（单存取RAM⑩）
HIGH-SPEED 4K X 16 SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM?
|
SRAM
Integrated Device Technology, Inc.
|
| AK5321024N |
2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5328192 AK5322048 AK532512 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK536512Z |
524,288 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK5361024W |
2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| AK536512W AK532512W AK532256AW |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
